- Using ultrahigh strength GaP nanowires to reveal the limitations of Raman-based strain measurements
- Weakest link analyses and the theoretical strength of Si nanowires
- How grain structure and film thickness control fatigue crack growth and fracture in ultrathin Pt films
All three lectures would include experimental results and various modeling strategies to better understand how structure and length scale controls deformation and damage accumulation in materials.
Speaker: Prof. Christopher L. Muhlstein, Georgia Institute of Technology, United States
Date and Time: 9:00 – 11:30 am, August 11 – 13, 2015
Venue: Hall room, Building 1, Institute of Mechanics, Chinese Academy of Sciences, 15 Beisihuanxi Road, Haidian District, Beijing
Chair: Prof. Youshi Hong, member of BICTAM Scientific Committee
About the speaker:
Christopher L. Muhlstein received his B.S. in Materials Science and Engineering from the University of California, Berkeley (1994), a M.S.in Metallurgy from the Georgia Institute of Technology (1996), and his Ph.D. in Materials Science and Engineering from the University of California, Berkeley (2002). Dr. Muhlstein joined the faculty in the School of Materials Science and Engineering at the Georgia Institute of Technology in 2011 after spending 9 years on the faculty at The Pennsylvania State University (2002-2011). Dr. Muhlstein’s research establishes fracture and fatigue mechanisms in bulk and thin film materials. Dr. Muhlstein is a member of Alpha Sigma Mu and Keramos honor societies and an NSF CAREER award recipient.
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